N04L1630C2B Datasheet - AMI SEMICONDUCTOR

N04L1630C2B 4Mb Ultra-Low Power Asynchronous CMOS SRAMs

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Power Ground Not C.

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overview The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS techno.

N04L1630C2B Features

* Wide Power Supply Range 2.7 to 3.6 Volts

* Very low standby current 1uA (Typical)

* Very low operating current 2.0mA at 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 1µs (Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte c

N04L1630C2B_AMISEMICONDUCTOR.pdf