N04Q1618C2B Datasheet - AMI SEMICONDUCTOR

N04Q1618C2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Power Po.

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricate.

N04Q1618C2B Features

* Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V

* Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ

* Very low standby current 50nA typical for 1.2V operation

* Very low operating current 400µA typical for 1.2V operation at 1µs

N04Q1618C2B Datasheet (328.02 KB)

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Datasheet Details

Part number:

N04Q1618C2B

Manufacturer:

AMI SEMICONDUCTOR

File Size:

328.02 KB

Description:

4mb ultra-low power asynchronous cmos sram.

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N04Q1618C2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM AMI SEMICONDUCTOR

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