N04Q1618C2B Datasheet - AMI SEMICONDUCTOR

N04Q1618C2B, 4Mb Ultra-Low Power Asynchronous CMOS SRAM

AMI Semiconductor, Inc.ULP Memory Solutions 670 North McCarthy Blvd.Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Ad.
Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enab.

Features

* Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V
* Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ
* Very low standby current 50nA typical for 1.2V operation
* Very low operating current 400µA typical for 1.2V operation at 1µs

Applications

* where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operat

N04Q1618C2B_AMISEMICONDUCTOR.pdf

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Datasheet Details

Part number:

N04Q1618C2B

Manufacturer:

AMI SEMICONDUCTOR

File Size:

328.02 KB

Description:

4Mb Ultra-Low Power Asynchronous CMOS SRAM

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N04Q1618C2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM AMI SEMICONDUCTOR

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