N04Q16YYC2B Datasheet - NanoAmp Solutions

N04Q16YYC2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VCCQ VSS VSSQ NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Core Pow.

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04Q16yyC2B Advance Information www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated us.

N04Q16YYC2B Features

* Multiple Power Supply Ranges 1.1V - 1.3V 1.65V - 1.95V 2.3V - 2.7V 2.7V - 3.6V

* Dual Vcc / VccQ Power Supplies 1.2V Vcc with 3V VccQ 1.8V Vcc with 3V VccQ 2.5V Vcc with 3V VccQ

* Very low standby current 50nA typical for 1.2V operation

* Very low operating current

N04Q16YYC2B Datasheet (332.96 KB)

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Datasheet Details

Part number:

N04Q16YYC2B

Manufacturer:

NanoAmp Solutions

File Size:

332.96 KB

Description:

4mb ultra-low power asynchronous cmos sram.

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N04Q16YYC2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM NanoAmp Solutions

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