N04L163WC1A Datasheet (NanoAmp Solutions) - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

N04L163WC1A, 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground (DOC# 14-02-018 REV I ECN# 01-1001) The specifications of this de

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L163WC1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low po

N04L163WC1A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 4.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Sin