N04L63W2A Datasheet (ON Semiconductor) - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

N04L63W2A, 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected N04L63W2A TSOP-II I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (

N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and

N04L63W2A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 4.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Dua