N04L63W1A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

ON Semiconductor

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Datasheet Details

Part number	N04L63W1A
Manufacturer	ON Semiconductor ↗
File Size	219.25 KB
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N04L63W1A_ONSemiconductor.pdf

N04L63W1A Product details

Description

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground N04L63W1A TSOP-II I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top)

Features

Single Wide Power Supply Range 2.3 to 3.6 Volts.
Very low standby current 4.0µA at 3.0V (Typical).
Very low operating current 2.0mA at 3.0V and 1µs (Typical).
Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.8V.
Very fast output enable access time 25ns OE access time.
Automatic power.

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