N04L63W1A Datasheet (ON Semiconductor) - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

N04L63W1A, 4Mb Ultra-Low Power Asynchronous CMOS SRAM

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Inp

N04L63W1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and LB)

N04L63W1A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 4.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Sin