N04L63W1A Datasheet, Sram, ON Semiconductor

N04L63W1A Features

  • Sram
  • Single Wide Power Supply Range 2.3 to 3.6 Volts
  • Very low standby current 4.0µA at 3.0V (Typical)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)

PDF File Details

Part number:

N04L63W1A

Manufacturer:

ON Semiconductor ↗

File Size:

219.25kb

Download:

📄 Datasheet

Description:

4mb ultra-low power asynchronous cmos sram. 1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2

Datasheet Preview: N04L63W1A 📥 Download PDF (219.25kb)
Page 2 of N04L63W1A Page 3 of N04L63W1A

N04L63W1A Application

  • Applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of

TAGS

N04L63W1A
4Mb
Ultra-Low
Power
Asynchronous
CMOS
SRAM
ON Semiconductor

📁 Related Datasheet

N04L63W2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM (ON Semiconductor)
N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W2A is an integrated memory device containing a 4 Mbit Static Ra.

N04L1618C2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N04L1618C2A .D.

N04L1630C2B - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs (AMI SEMICONDUCTOR)
AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Ad.

N04L163WC1A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N04L163WC1A .D.

N04L163WC1C - 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 .nanoamp. N04L163WC1C Advance ...

N04L163WC2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N04L163WC2A .D.

N0412N - N-Channel MOSFET (Renesas)
N0412N N-channel MOSFET 40 V, 100 A, 3.7 mΩ Preliminary Data Sheet R07DS0554EJ0200 Rev.2.00 2020.6.10 Features • Low on-state resistance : RDS (on) .

N0413N - N-channel MOSFET (Renesas)
N0413N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Description The N0413N is N-channel MOS Field Eff.

N0416SC020 - Phase Control Thyristor Stud (IXYS)
Phase Control Thyristor Stud Types N0416S#020 to N0416S#080 The data sheet on the subsequent pages of this document is a scanned copy of existing data.

N0416SC040 - Phase Control Thyristor (IXYS)
Date:- 23rd Sept 2014 Data Sheet Issue:- 3 Phase Control Thyristor Types N0416SC040 to N0416SC080 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOL.

Stock and price

part
onsemi
IC SRAM 4MBIT PARALLEL 48BGA
DigiKey
N04L63W1AB27I
0 In Stock
Qty : 480 units
Unit Price : $4.2
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts