N04L163WC1C Datasheet - NanoAmp Solutions

N04L163WC1C 4Mb Ultra-Low Power Asynchronous CMOS SRAM

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 3 A0 A3 A5 A17 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 VCC VSS NC DNU Pin Function Address Inputs Write Enable Input Chip Enable I.

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L163WC1C Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low p.

N04L163WC1C Features

* Single Wide Power Supply Range 2.2 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 1.5mA at 3.0V and 1µs (Typical)

* Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable

N04L163WC1C_NanoAmpSolutions.pdf