N04L1618C2A Datasheet - NanoAmp Solutions

N04L1618C2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected (DOC# 14-02-016 REV G ECN# 01-1266) The specifications of t.

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low powe.

N04L1618C2A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 0.7mA at 1.8V and 1µs (Typical)

* Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Dual Ch

N04L1618C2A Datasheet (277.52 KB)