N02L6181A Datasheet - ON Semiconductor

N02L6181A Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground Rev. 4 | Page 2 of 11 | www.onsemi.com N02L6181A Functional Bloc.

N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single c.

N02L6181A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 1.4mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Si

N02L6181A_ONSemiconductor.pdf