N02L163WN1A Datasheet - NanoAmp Solutions

N02L163WN1A Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A16 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Not Connected Power Ground (DOC# 14-02-014 REV L ECN# 01-1000) The specifications of this de.

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device ope.

N02L163WN1A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)

* Simple memory control Sin

N02L163WN1A Datasheet (294.69 KB)