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N02L1618C1A - Ultra-Low Power Asynchronous CMOS SRAM

Datasheet Summary

Description

Stock No.

Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 1.4mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access time.

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Datasheet Details

Part number N02L1618C1A
Manufacturer NanoAmp Solutions
File Size 293.64 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L1618C1A Datasheet
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advancewww.DataSheet4U.com Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N02L163WN1A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.
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