N02L1618C1A Datasheet PDF (Ultra-Low Power Asynchronous CMOS SRAM)

General Description

Stock No.

Key Features

Single Wide Power Supply Range 1.65 to 2.2 Volts.
Very low standby current 0.5µA at 1.8V (Typical).
Very low operating current 1.4mA at 1.8V and 1µs (Typical).
Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
Low voltage data retention Vcc = 1.2V.
Very fast output enable access time.

Datasheet Details

Part number	N02L1618C1A
Manufacturer	NanoAmp Solutions
File Size	293.64 KB
Description	Ultra-Low Power Asynchronous CMOS SRAM
Datasheet	N02L1618C1A Datasheet

Part number

N02L1618C1A

Manufacturer

NanoAmp Solutions

File Size

293.64 KB

Description

Ultra-Low Power Asynchronous CMOS SRAM

Datasheet

N02L1618C1A Datasheet

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Other Datasheets by NanoAmp Solutions

Part Number	Description
N02L163WC2A	Ultra-Low Power Asynchronous CMOS SRAM
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Part Number

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advancewww.DataSheet4U.com Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N02L163WN1A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.