N02L163WN1A Description
1982 Zanker Road, San Jose, CA 95112 ph: 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16bit Overview The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.
N02L163WN1A Key Features
- Single Wide Power Supply Range 2.3 to 3.6 Volts
- Very low standby current 2.0µA at 3.0V (Typical)
- Very low operating current 2.0mA at 3.0V and 1µs (Typical)
- Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
- Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory
- Low voltage data retention Vcc = 1.8V
- Very fast output enable access time 30ns OE access time
- Automatic power down to standby mode
- TTL patible three-state output driver
- pact space saving BGA package available
N02L163WN1A Applications
- Single Wide Power Supply Range 2.3 to 3.6 Volts