NanoAmp Solutions N02L163WN1A
The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion.| Part No. | N02L163WN1A |
|---|---|
| Datasheet | N02L163WN1A Download |
| Manufacturer |  NanoAmp Solutions |
| Description | Ultra-Low Power Asynchronous CMOS SRAM |
| Buy | Stock & Price |
FEATURES
● Single Wide Power Supply Range 2.3 to 3.6 Volts● Very low standby current 2.0µA at 3.0V (Typical)
● Very low operating current 2.0mA at 3.0V and 1µs (Typical)
● Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
● Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion
● Low voltage data retention Vcc = 1.8V
● Very fast output enable access time 30ns OE access time
● Automatic power down to standby mode
● TTL compatible three-state output driver
● Compact space saving BGA package available Product Family Part Number N02L163WN1AB N02L163WN1AT N02L163WN1AB1 N02L163WN1AT2 Package Type 48 - BGA 44 - TSOP II 48 - BGA Pb-Free 44 - TSOP II Green 55ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 70ns @ 2.3V 2 µA 2 mA @ 1MHz Operating Temperature Power Supply (Vcc) Speed Standby Operating Current (ISB), Current (Icc), Typical Typical (DOC# 14-02-014 REV L ECN# 01-1000) The specifications of this device are subject to change without notice.
