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N02L163WC2A Datasheet Ultra-low Power Asynchronous CMOS Sram

Manufacturer: NanoAmp Solutions

Overview: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L163WC2A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit Overview The N02L163WC2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N02L163WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.

Datasheet Details

Part number N02L163WC2A
Manufacturer NanoAmp Solutions
File Size 296.72 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N02L163WC2A_NanoAmpSolutions.pdf

Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable acces.

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