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Renesas Electronics Components Datasheet

2SA1646 Datasheet

Silicon Power Transistor

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2SA1646,2SA1646-Z
Silicon Power Transistor
Preliminary Data Sheet
R07DS0048EJ0200
Rev.2.00
Jul 01, 2010
Description
The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-
emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
Features
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) = 0.3 V MAX. @IC = 6 A
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ID(DC)
IC(pulse)
IB(DC)
PT
PT
Tj
Tstg
Conditions
PW 300 μs, duty cycle 10%
Tc = 25°C
Ta = 25°C
Ratings
150
100
7.0
10
20
6.0
40
1.5
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Package Drawing (Unit: mm)
?
?
?
?
Electrode Connection
?
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 1 of 4


Renesas Electronics Components Datasheet

2SA1646 Datasheet

Silicon Power Transistor

No Preview Available !

2SA1646,2SA1646-Z
Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
Turn-on time
Storage time
Fall time
ICBO
IEBO
hFE1*1
hFE2*1
hFE3*1
VCE(sat)1*1
VCE(sat)2*1
VBE(sat)1*1
VBE(sat)2*1
fT
Cob
ton
tstg
tf
VCB = 100 V, IE = 0 A
VEB = 5 V, IC = 0 A
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 2 A
VCE = 2 V, IC = 6 A
IC = 6 A, IB = 0.3 A
IC = 8 A, IB = 0.4 A
IC = 6 A, IB = 0.3 A
IC = 8 A, IB = 0.4 A
VCE = 10 V, IC = 0.5 A
VCB = 10 V, IE = 0 A, f = 1 MHz
IC = 6 A, IB1 = IB2 = 0.3 A,
RL = 8.3 Ω, VCC = 50 V
Refer to the test circuit.
Note: *1.Pulse test PW 350 μs, Duty Cycle 2%
hFE Classification
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
Switching Time Test Circuit
Chapter Title
MIN.
100
100
60
TYP.
150
250
0.3
1.5
0.4
MAX.
10
10
400
0.3
0.5
1.2
1.5
Unit
μA
μA
V
V
V
V
MHz
pF
μs
μs
μs
Base current
waveform
Collector current
wavefo rm
R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
Page 2 of 4


Part Number 2SA1646
Description Silicon Power Transistor
Maker Renesas
Total Page 6 Pages
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