• Part: 2SC5508
  • Description: NPN SILICON RF TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 246.24 KB
Download 2SC5508 Datasheet PDF
Renesas
2SC5508
FEATURES - - - - - Ideal for low-noise, high-gain amplification applications NF = 1.1 d B TYP., Ga = 16 d B TYP. @ VCE = 2 V, IC = 5 m A, f = 2 GHz Maximum available power gain: MAG = 19 d B TYP. @ VCE = 2 V, IC = 20 m A, f = 2 GHz f T = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 2SC5508-T2B Order Number 2SC5508-A 2SC5508-T2-A 2SC5508-T2B-A Quantity 50 pcs (Non reel) 3 kpcs/reel 15 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form - 8 mm wide embossed taping - Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note...