Datasheet Details
| Part number | 2SC5509 |
|---|---|
| Manufacturer | Renesas |
| File Size | 248.04 KB |
| Description | NPN SILICON RF TRANSISTOR |
| Datasheet |
 2SC5509 Datasheet
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General Description
Summary First edition issued Renesas format is applied to
Key Features
- Ideal for medium output power amplification NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package.