Part 2SC5509
Description NPN SILICON RF TRANSISTOR
Category Transistor
Manufacturer Renesas
Size 248.04 KB
Renesas

2SC5509 Overview

Key Features

  • Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP
  • @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP
  • @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package <R>