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2SC5509 Datasheet NPN Silicon Rf Transistor

Manufacturer: Renesas

Overview: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0056EJ0300 Rev.3.

Datasheet Details

Part number 2SC5509
Manufacturer Renesas
File Size 248.04 KB
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5509_Renesas.pdf

Key Features

  • Ideal for medium output power amplification NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package.

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