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2SC5509 - NPN SILICON RF TRANSISTOR

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Renesas

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2SC5509 NPN SILICON RF TRANSISTOR by Renesas - Datasheet Preview — Datasheet preview – 2SC5509

Datasheet Details

Part number	2SC5509
Manufacturer	Renesas
File Size	248.04 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC5509 Datasheet
Additional preview pages of the 2SC5509 datasheet.

Product details

Description

Summary First edition issued Renesas format is applied to

Features

Ideal for medium output power amplification NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package.

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Published: Nov 10, 2013 |