Renesas Electronics 2SC5509
NPN SILICON RF TRANSISTOR
| Part No. | 2SC5509 |
|---|---|
| Datasheet | 2SC5509 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN SILICON RF TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Order Number 2SC5509-A 2SC5509-T2-A Quantity 50 pcs (Non reel) 3 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form
● 8 mm wide embossed taping
● Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note Free air. Symbol VCBO VCEO VEBO IC PtotNote Tj Tstg Ratings...
