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2SC5508 - NPN SILICON RF TRANSISTOR

General Description

Summary First edition issued Renesas format is applied to this data sheet.

ORDERING INFORMATION is modified.

Up to date S-PARAMETERS.

Key Features

  • Ideal for low-noise, high-gain amplification.

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Datasheet Details

Part number 2SC5508
Manufacturer Renesas
File Size 246.24 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC5508 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) R09DS0055EJ0200 Rev.2.00 Mar 5, 2013 FEATURES • • • • • Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP.