Renesas Electronics 2SC5508
NPN SILICON RF TRANSISTOR
| Part No. | 2SC5508 |
|---|---|
| Datasheet | 2SC5508 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN SILICON RF TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package <R> ORDERING INFORMATION Part Number 2SC5508 2SC5508-T2 2SC5508-T2B Order Number 2SC5508-A 2SC5508-T2-A 2SC5508-T2B-A Quantity 50 pcs (Non reel) 3 kpcs/reel 15 kpcs/reel Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Supplying Form
● 8 mm wide embossed taping
● Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Note Free air.
