Part 2SC5509
Description NPN SILICON RF TRANSISTOR
Category Transistor
Manufacturer NEC
Size 106.56 KB
NEC

2SC5509 Overview

Key Features

  • Ideal for medium output power amplification
  • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
  • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
  • fT = 25 GHz technology adopted
  • Flat-lead 4-pin thin-type super minimold package