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2SC5509 - NPN SILICON RF TRANSISTOR

Key Features

  • Ideal for medium output power amplification.
  • NF = 1.2 dB TYP. , Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz.
  • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz.
  • fT = 25 GHz technology adopted.
  • Flat-lead 4-pin thin-type super minimold package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz • fT = 25 GHz technology adopted • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.