NEC 2SC5509
NPN SILICON RF TRANSISTOR
| Part No. | 2SC5509 |
|---|---|
| Datasheet | 2SC5509 Download |
| Manufacturer |  NEC |
| Description | NPN SILICON RF TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Ideal for medium output power amplification● NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
● Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
● fT = 25 GHz technology adopted
● Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5509 2SC5509-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form
● 8 mm wide embossed taping
● Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 100 190 150 −65 to +150 Unit V V V mA mW °C °C Tj Tstg Note Free Air Because this product uses high-frequency technology, avoid excessive static electricity, etc.
