2SC5509 Description
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD.
2SC5509 Key Features
- Ideal for medium output power amplification
- NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
- Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
- fT = 25 GHz technology adopted
- Flat-lead 4-pin thin-type super minimold package
- 8 mm wide embossed taping
- Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape