2SC5998 Description
2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006.
2SC5998 Key Features
- High Transition Frequency fT = 11 GHz typ
- High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz P
- High Collector to Emitter Voltage VCEO = 5 V
- Ideal for up to 2 GHz