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Bipolar Transistor
50 V, 2 A, Low VCE(sat), NPN Single
2SC5994
Features
• Adoption of MBIT Process • Low Collector to Emitter Saturation Voltage • Large Current Capacity • High Speed Switching
Applications
• Voltage Regulators • Relay Drivers • Lamp Drivers • Electrical Equipment
SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCES
100
V
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
4
A
Base Current
IB
400
mA
Collector Dissipation (Note 1) TC = 25°C
PC
W
1.3
3.