Datasheet Summary
Silicon NPN Epitaxial High Frequency Medium Power Amplifier
REJ03G0169-0101 Rev.1.01
Jan 27, 2006
Features
- High Transition Frequency fT = 11 GHz typ.
- High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz
- High Collector to Emitter Voltage VCEO = 5 V
- Ideal for up to 2 GHz applications. e.g.FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
Note: Marking is “YC-”.
3 1
1. Collector 2. Base 3....