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2SC5998 Datasheet NPN Transistor

Manufacturer: Renesas

Overview: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.

Key Features

  • High Transition Frequency fT = 11 GHz typ.
  • High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz.
  • High Collector to Emitter Voltage VCEO = 5 V.
  • Ideal for up to 2 GHz.

2SC5998 Distributor