2SC5998 - NPN Transistor

Renesas

Key Features

High Transition Frequency fT = 11 GHz typ.
High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz.
High Collector to Emitter Voltage VCEO = 5 V.
Ideal for up to 2 GHz.

2SC5998 npn transistor by Renesas - Datasheet Preview

Datasheet Details

Part number	2SC5998
Manufacturer	Renesas
File Size	109.61 KB
Description	NPN Transistor
Datasheet	2SC5998 Datasheet

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Full PDF Text Transcription (Reference)

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2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin = +16 dBm, f = 500 MHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for up to 2 GHz applications. e.g.FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “YC-”. 3 1 2 1. Collector 2. Base 3.