Datasheet Specifications
- Part number
- 2SD1164-Z
- Manufacturer
- Renesas ↗
- File Size
- 1.77 MB
- Datasheet
- 2SD1164-Z_Renesas.pdf
- Description
- SILICON POWER TRANSISTOR
Description
Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR .
Features
* High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law2SD1164-Z Distributors
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