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2SD1164-Z - SILICON POWER TRANSISTOR

General Description

The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.

Key Features

  • High hFE = 2 000 to 30 000.

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Datasheet Details

Part number 2SD1164-Z
Manufacturer Renesas
File Size 1.77 MB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SD1164-Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SD1164-Z SILICON POWER TRANSISTOR DESCRIPTION R07DS0254EJ0400 Rev.4.00 Feb 24, 2011 The 2SD1164-Z is designed for Low Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE = 2 000 to 30 000 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 SYMBOL VCBO VCEO VEBO IC(DC) IC(pulse) Note 2 RATINGS 150 60 8.0 2 4 2.0 150 −55 to +150 UNIT V V V A A W °C °C Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature PT Tj Tstg Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm The mark shows major revised points.