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Renesas Electronics Components Datasheet

2SK1483C Datasheet

N-CHANNEL MOSFET FOR SWITCHING

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Preliminary Data Sheet
2SK1483C
N-CHANNEL MOSFET FOR SWITCHING
R07DS1263EJ0200
Rev.2.00
Jun 19, 2015
Description
The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 2.5 V power source.
Features
Directly driven by a 2.5 V power source.
Low on-state resistance
RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 65 mMAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 91 mMAX. (VGS = 2.5 V, ID = 2.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SK1483C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XC
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
Drain Current (pulse) Note1
ID(pulse)
Total Power Dissipation Note2
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note1 PW 10 s, Duty Cycle 1%
Note2 16 cm2 X 0.7mm, ceramic substrate used
30
12
3.5
14
2.0
150
55 to 150
V
V
A
A
W
C
C
R07DS1263EJ0200 Rev.2.00
Jun 19, 2015
Page 1 of 6


Renesas Electronics Components Datasheet

2SK1483C Datasheet

N-CHANNEL MOSFET FOR SWITCHING

No Preview Available !

2SK1483C
Electrical Characteristics (TA = 25C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage Note
Note Pulsed
Test Circuit Switching Time
Symbol
Test Conditions
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
VF(S-D)
VDS = 30 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VDS = 10V, ID = 1 mA
VDS = 10 V, ID = 2.0 A
VGS = 4.5 V, ID = 2.0 A
VGS = 4.0 V, ID = 2.0 A
VGS = 2.5 V, ID = 2.0 A
VDS = 10 V,
VGS = 0 V,
f = 1.0 MHz
VDD = 10 V,
ID = 2 A,
VGS = 4 V,
RG = 10
ID = 3.5 A, VDD = 24 V, VGS = 4 V
IF = 3.5 A, VGS = 0 V
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
0 10%
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
MIN. TYP. MAX. UNIT
10 A
10 A
0.5 1.0 1.5
V
1.0 4.9
S
50 63 m
52 65 m
68 91 m
260 pF
60 pF
35 pF
28 ns
65 ns
98 ns
80 ns
4 nC
0.89 V
R07DS1263EJ0200 Rev.2.00
Jun 19, 2015
Page 2 of 6


Part Number 2SK1483C
Description N-CHANNEL MOSFET FOR SWITCHING
Maker Renesas
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2SK1483C Datasheet PDF





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