2SK2529 Datasheet | Renesas

Features - Low on-resistance - RDS(on) = 7 mΩ typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C- FM) 1. Gate 2. Drain 3. Source 12 3 Rev.8.00 Sep 07, 2005 page 1 of 7 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)- 1 IDR IAP- 3 EAR- 3 Pch- 2 Tch Tstg Ratings 60 ±20 50 200 50 45 174 35 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS - Zero gate voltage drain current IDSS - Gate to source cutoff...