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2SK2529 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power.

Key Features

  • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2529 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µ.

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Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK2529 Silicon N-Channel MOSFET Renesas

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