2SK2529 Overview
2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching.
2SK2529 Key Features
- Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
Datasheet Details
| Part number | 2SK2529 |
|---|---|
| Datasheet | 2SK2529_HitachiSemiconductor.pdf |
| File Size | 51.33 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel MOSFET |
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