2SK2529 Description
2SK2529 Silicon N Channel MOS FET Application High speed power switching.
2SK2529 Key Features
- Low on-resistance
- RDS(on) = 7 mΩ typ
- High speed switching
- 4 V gate drive device can be driven from 5 V source
- Part: 2SK2529
- Manufacturer: Renesas (official site)
- Size: 85.49 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SK2529 | Silicon N-Channel MOSFET |