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2SK2552 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

General Description

The 2SK2552 is suitable for converter of ECM.

Key Features

  • Compact package.
  • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA).
  • Includes diode and high resistance at G - S.

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Datasheet Details

Part number 2SK2552
Manufacturer Renesas
File Size 257.42 KB
Description N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Datasheet download datasheet 2SK2552 Datasheet

Full PDF Text Transcription for 2SK2552 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK2552. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552 is suitable ...

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OR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK2552 PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 VDSX 20 Gate to Drain Voltage VGDO –20 Drain Current ID 10 Gate Current Total Power Dissipation Note2 IG 10 PT 200 Junction Temperature Tj 125 Storage Temperature Tstg –55 to +125 V V mA mA mW °C °C 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm

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