Full PDF Text Transcription for 2SK3209 (Reference)
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2SK3209. For precise diagrams, and layout, please refer to the original PDF.
2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven fr...
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Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.3.00 Sep 07, 2005 page 1 of 3 2SK3209 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SK3209 Datasheet
