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2SK3211S - Silicon N-Channel MOSFET

Download the 2SK3211S datasheet PDF. This datasheet also covers the 2SK3211 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS = 60 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3211-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK3211S
Manufacturer Renesas
File Size 85.48 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3211S Datasheet

Full PDF Text Transcription for 2SK3211S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3211S. For precise diagrams, and layout, please refer to the original PDF.

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device c...

View more extracted text
ance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 May 15, 2006 page 1 of 8 2SK3211(L), 2SK3211(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes

📁 Similar Datasheet

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Hitachi Semiconductor Logo 2SK3211S N-Channel MOSFET Hitachi Semiconductor
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Hitachi Semiconductor Logo 2SK3211L N-Channel MOSFET Hitachi Semiconductor

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