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2SK3211 - N-Channel MOSFET

Key Features

  • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VD.

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📁 Similar Datasheet

Part Number Description Manufacturer
2SK3211 Silicon N-Channel MOSFET Renesas
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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3211L N-Channel MOSFET
2SK3211S N-Channel MOSFET
2SK3212 N-Channel MOSFET
2SK3214 N-Channel MOSFET
2SK3215 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP * 3 3 2 Ratings 200 ±20 25 100 25 25 41 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Tch Pch * Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.