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2SK3211S - Silicon N-Channel MOSFET

Download the 2SK3211S datasheet PDF. This datasheet also covers the 2SK3211 variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS = 60 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3211-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK3211S
Manufacturer Renesas
File Size 85.48 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK3211S Datasheet

📁 Similar Datasheet

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2SK3212 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK3211 Silicon N-Channel MOSFET
2SK3211L Silicon N-Channel MOSFET
2SK3212 Silicon N-Channel MOSFET
2SK3209 Silicon N-Channel MOSFET
2SK3228 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 3 123 S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 May 15, 2006 page 1 of 8 2SK3211(L), 2SK3211(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.