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2SK3219-01MR - N-Channel MOSFET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15.

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Other Datasheets by Fuji Electric

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2SK3216-01 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 150 ±40 ±160 ±30 387 2.