The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3262-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 200 ±20 ±80 ±20 355 2 45 +150 -55 to +150 Unit V A A V mJ W W °C °C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*1 L=1.