| Part Number | 2SK3211S Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate.
* * * Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source 2SK3211 Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain . |
2SK3211S Datasheet and Specifications PDF
The 2SK3211S is a N-Channel MOSFET.
| Part Number | 2SK3211S Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Renesas |
| Overview |
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
.
* Low on-resistance RDS = 60 mΩ typ. * High speed switching * 4 V gate drive device can be driven from 5 V source REJ03G1091-0400 Rev.4.00 May 15, 2006 Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 4 G 12 . |