2SK3211S
2SK3211S is N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
1 1
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID ID(pulse)- 1 IDR IAP
- 3 3 2
Ratings 200 ±20 25 100 25 25 41 100 150
- 55 to +150
Unit V V A A A A m J W °C °C
EAR- Tch
Pch
- Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3211
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 200 ±20
- - 1.0
- - 18
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- -
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- Typ
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- 60 65 30 2420 790 340 20 230 590 330 0.95 230 Max
- - ±10 10 2.5 75 85
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