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2SK3418 Datasheet Silicon N-Channel MOSFET

Manufacturer: Renesas

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Overview

2SK3418 Silicon N Channel MOS FET High Speed Power Switching.

Key Features

  • Low on-resistance RDS(on) = 4.3 mΩ typ.
  • Capable of 4 V gate drive.
  • High speed switching Outline TO-220AB D G S1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS V.

📁 Similar Datasheet

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Hitachi Semiconductor Logo 2SK3418 Silicon N Channel MOS FET Hitachi Semiconductor

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