* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
* Low Ciss: Ciss = 8500 pF TYP.
* Built-in gate protection diode 2SK3510-S TO.

ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES
* Super low on-state resistance: RDS(on) =.

The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES
* Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID.

2SK351

2SK3511

2SK3512-01L

2SK3512-S

2SK3512-SJ

2SK3513-01L

2SK3513-01S

2SK3513-01SJ

2SK3514-01

2SK3515-01MR

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