900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

BCR3AM-14B Datasheet

Triac

No Preview Available !

BCR3AM-14B
700V - 3A - Triac
Low Power Use
Features
IT (RMS) : 3 A (non-continuous)
VDRM : 800 V (Tj = 125 °C)
IFGTI, IRGTI, IRGT III: 30 mA
Data Sheet
R07DS1422EJ0200
(Previous: REJ03G1806-0100)
Rev.2.00
Dec. 12, 2018
Tj: 150 °C
Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
PRSS0003DJ-A
(Package name: TO-92*) (Package name: TO-92)
132
132
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
Application
Non-continuous Motor control and other general purpose non-continuous AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
14
800
700
840
Unit
V
V
V
Conditions
Tj=125C
Tj=150C
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
IT (RMS)
Ratings
3
ITSM
30
I2t
3.7
PGM
PG (AV)
VGM
IGM
Tj
Tstg
3
0.3
6
0.5
40 to +150
40 to +150
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, non-continuous
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
A
C
C
R07DS1422EJ0200 Rev.2.00
Dec. 12, 2018
Page 1 of 8


Renesas Electronics Components Datasheet

BCR3AM-14B Datasheet

Triac

No Preview Available !

BCR3AM-14B
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
Gate trigger voltageNote2
Gate trigger currentNote2
VFGT
 VRGT
 VRGT
IFGT

IRGT
 IRGT
Typ.
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 4.5 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
0.1
Tj = 150C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
50
C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 5
V/s Tj = 125C
commutating voltageNote4
1
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = 1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS1422EJ0200 Rev.2.00
Dec. 12, 2018
Page 2 of 8


Part Number BCR3AM-14B
Description Triac
Maker Renesas
PDF Download

BCR3AM-14B Datasheet PDF






Similar Datasheet

1 BCR3AM-14B Triac
Renesas





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy