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Renesas Electronics Components Datasheet

BCR4CM-16LH Datasheet

Triac

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BCR4CM-16LH
800V - 4A - Triac
Medium Power Use
Features
IT (RMS) : 4 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III: 35 mA or 10 mA(IGT item:1)
Data Sheet
R07DS0255EJ0300
Rev.3.00
Feb. 1, 2019
Tj: 150°C
Planar Passivation Type
High Commutation
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
Ordering code 4
#BB0
RENESAS Package code: PRSS0004AT-A
(Package name: TO-220ABA)
Ordering code 4
#BH0
123
123
2, 4
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3 4. T2 Terminal
1
Application
Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Symbol
IT (RMS)
Ratings
4
ITSM
30
I2t
3.7
PGM
PG (AV)
VGM
IGM
Tj
Tstg
3
0.3
10
2
40 to +150
40 to +150
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, Tc = 132CNote3
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
A
C
C
R07DS0255EJ0300 Rev.3.00
Feb. 1, 2019
Page 1 of 8


Renesas Electronics Components Datasheet

BCR4CM-16LH Datasheet

Triac

No Preview Available !

BCR4CM-16LH
Data Sheet
Electrical Characteristics
Parameter
BCR4CM-16LH-1 BCR4CM-16LH
Symbol
(IGT item:1)
Unit
Min. Typ. Max. Min. Typ. Max.
Test conditions
Repetitive peak off-state current IDRM — — 2.0 — — 2.0 mA Tj = 150C
VDRM applied
On-state voltage
VTM — — 1.6 — — 1.6
V Tc = 25C, ITM = 6 A
instantaneous
measurement
Gate trigger voltageNote2
VFGT

VRGT
1.5
1.5
1.5
1.5
V Tj = 25C, VD = 6 V
V RL = 6 , RG = 330
 VRGT
1.5
1.5
V
Gate trigger currentNote2
IFGT
10 — — 35
mA Tj = 25C, VD = 6 V

IRGT
10
35
mA RL = 6 , RG = 330
 IRGT
10
35
mA
Gate non-trigger voltage
VGD 0.2 — — 0.2 — —
V Tj = 125C
VD = 1/2 VDRM
Thermal resistance
0.1 — — 0.1 — —
V Tj = 150C
VD = 1/2 VDRM
Rth (j-c)
3.3
3.3 C/W Junction to caseNote3,4
Critical-rate of fall of on-state
commutating currentNote5
(di/dt)c 2.5 — — — — — A/ms Tj = 125C
(dv/dt)c < 10 V/s
— — — 3.0 — — A/ms Tj = 125C
(dv/dt)c < 100 V/s
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth(c-f) in case of greasing is 1.0C /W.
5. Test conditions of the critical-rate of fall of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Peak off-state voltage
VD = 400 V
3. Rate of rise of off-state commutating voltage
(dv/dt)c < 10 V/s (IGT item : 1)
(dv/dt)c < 100 V/s
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Main Current
Main Voltage
(dv/dt)c
Time
(di/dt)c
Time
Time
VD
R07DS0255EJ0300 Rev.3.00
Feb. 1, 2019
Page 2 of 8



Part Number BCR4CM-16LH
Description Triac
Maker Renesas
Total Page 3 Pages
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