.
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RJP30E2 - N-Channel Power MOSFET
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation v.
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NE5550979A - Silicon Power LDMOS FET
Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7..
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NE5550279A - Silicon Power LDMOS FET
Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 FEATURES • High Output Power : Pout = 33.0 dBm TYP. (VDS = 7..
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ISL95522 - Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Battery Charger
DATASHEET To request the full datasheet, please visit the ISL95522 product page. ISL95522 Hybrid Power Boost (HPB) and Narrow VDC (NVDC) Combo Batte.
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NE5550234 - Silicon Power MOSFET
Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS =.
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R5F100GEAFB - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
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RJP63F3A - N-Channel IGBT
RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitt.
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BCR08AM-14A - Triac
BCR08AM-14A 700V - 0.8A - Triac Low Power Use Features • IT (RMS): 0.8 A • VDRM: 700 V • IRGTI, IRGTI, IRGT III: 5 mA • Tj: 125 °C Data Sheet R07DS12.
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RJP30H2A - Silicon N-Channel IGBT
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features T.
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K2225 - High Speed Power Switching MOSFET
2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) Hig.
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RJP30H1 - N-Channel IGBT
RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching:.
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UPD78F0515 - 8-bit Single-Chip Microcontrollers
User’s Manual 78K0/KC2 8-bit Single-Chip Microcontrollers μPD78F0511 μPD78F0512 μPD78F0513 μPD78F0514 μPD78F0515 μPD78F0513D μPD78F0515D μPD78F0511.
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UPD78F0513A - 8-bit Single-Chip Microcontrollers
User’s Manual 78K0/KC2 8-bit Single-Chip Microcontrollers μPD78F0511 μPD78F0512 μPD78F0513 μPD78F0514 μPD78F0515 μPD78F0513D μPD78F0515D μPD78F0511.
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UPD78F0514A - 8-bit Single-Chip Microcontrollers
User’s Manual 78K0/KC2 8-bit Single-Chip Microcontrollers μPD78F0511 μPD78F0512 μPD78F0513 μPD78F0514 μPD78F0515 μPD78F0513D μPD78F0515D μPD78F0511.
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BCR3AM-14B - Triac
BCR3AM-14B 700V - 3A - Triac Low Power Use Features • IT (RMS): 3 A (non-continuous) • VDRM: 800 V (Tj = 125°C) • IFGTI, IRGTI, IRGT III: 30 mA • Tj: .
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RJP63K2DPP-M0 - N-Channel IGBT
Preliminary Datasheet RJP63K2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate and thin wafer technology (G6H-I.
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BCR12LM-14LB - Triac
Preliminary Datasheet BCR12LM-14LB Triac Medium Power Use Features IT (RMS) : 12 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Vi.
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D667 - Silicon NPN Transistor
2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRS.
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K1317 - Silicon N-Channel MOSFET
2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low.
