* Ideal for medium output power amplification
* PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* Flat-lead 4-pin thin-type super minimold package ORDE
C5751
131.78 KB
Npn silicon rf transistor.
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER M.
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