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Renesas Electronics Components Datasheet

CR12CM-12A Datasheet

Thyristor

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CR12CM-12A
600V - 12A - Thyristor
Medium Power Use
Features
IT (AV) : 12 A
VDRM : 600 V
IGT: 30 mA
Data Sheet
R07DS1035EJ0500
Rev.5.00
Jan. 15, 2019
Non-insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A RENESAS Package code: PRSS0004AT-A
(Package name: TO-220AB)
(Package name: TO-220ABA)
Ordering code 4
Ordering code 4
2, 4
#BB0
#BH0
123
123
3
1
1. Cathode
2. Anode
3. Gate
4. Anode
Application
Power supply, motor control, heater control and other general purpose applications.
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Symbol
IT (RMS)
IT (AV)
Ratings
18.8
12
ITSM
360
I2t
544
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
5
0.5
6
10
2
40 to +125
40 to +125
Unit
Conditions
A
A
Commercial frequency, sine half wave
180conduction, Tc = 91CNote1
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
W
W
V
V
A
C
C
R07DS1035EJ0500 Rev.5.00
Jan. 15, 2019
Page 1 of 8


Renesas Electronics Components Datasheet

CR12CM-12A Datasheet

Thyristor

No Preview Available !

CR12CM-12A
Data Sheet
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
2.0
mA Tj = 125C, VRRM applied
Repetitive peak off-state current IDRM
2.0
mA Tj = 125C, VDRM applied
On-state voltage
VTM
1.6
V
Tc = 25C, ITM = 40 A,
instantaneous value
Gate trigger voltage
VGT
1.5
V
Tj = 25C, VD = 6 V, IT = 1A
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
Gate trigger current
IGT
30
mA Tj = 25C, VD = 6 V, IT = 1A
Holding current
IH
30
mA Tj = 25C, VD = 12 V
Thermal resistance
Rth (j-c)
1.2
C/W Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance Rth(c-f) in case of greasing is 1.0C /W.
R07DS1035EJ0500 Rev.5.00
Jan. 15, 2019
Page 2 of 8



Part Number CR12CM-12A
Description Thyristor
Maker Renesas
Total Page 3 Pages
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CR12CM-12A Datasheet PDF





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