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HAF1010RJ Datasheet P-Channel MOSFET

Manufacturer: Renesas

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General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Overview

Target Specifications Datasheet HAF1010RJ Silicon P Channel MOS FET Series Power Switching R07DS1361EJ0200 Rev.2.

Key Features

  • Logic level operation to (.
  • 4 to.
  • 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V and 24 V. Outline.

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