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HAF2015RJ - N-Channel MOSFET

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • Logic level operation (5 to 6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Temperature hysteresis type.
  • High density mounting. Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (5 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Temperature hysteresis type. • High density mounting.