HAF2015RJ Datasheet | Hitachi Semiconductor

.. Silicon N Channel MOS FET Series Power Switching ADE-208-933 (Z) 1st. Edition Dec. 2000 This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features - - - - - Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built- in the over temperature shut- down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate...