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HAF2015RJ - N-Channel MOSFET

Key Features

  • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit 1 S D 5 5 7 6 3 1 2 4 MOS1 D 6 4 G Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com HAF2015RJ Silicon N Channel MOS FET Series Power Switching ADE-208-933 (Z) 1st. Edition Dec. 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Temperature hysteresis type. High density mounting.