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HAF2015RJ Datasheet N-channel MOSFET

Manufacturer: Renesas

Overview: HAF2015RJ Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Key Features

  • Logic level operation (5 to 6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Temperature hysteresis type.
  • High density mounting. Outline.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Hitachi Semiconductor Logo HAF2015RJ N-Channel MOSFET Hitachi Semiconductor

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