HAF2015RJ Datasheet | Renesas

Silicon N Channel MOS FET Series Power Switching REJ03G1141-0300 Rev.3.00 Aug 27, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features - Logic level operation (5 to 6 V Gate drive) - High endurance capability against to the short circuit - Built-in the over temperature shut-down circuit - Temperature hysteresis type. - High density mounting. Outline RENESAS Package code: PRSP0008DD-A...