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HAT2096H
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS (on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1234
4 G
5 D
S SS 1 23
REJ03G1186-0400 (Previous: ADE-208-1431B)
Rev.4.00 Sep 07, 2005
1, 2, 3 4 5
Source Gate Drain
Rev.4.00 Sep 07, 2005 page 1 of 6
HAT2096H
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2096H Datasheet
