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Renesas Electronics Components Datasheet

HAT2096H Datasheet

Silicon N-Channel Power MOSFET Power Switching

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HAT2096H
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 4.2 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1234
4
G
5
D
S SS
1 23
REJ03G1186-0400
(Previous: ADE-208-1431B)
Rev.4.00
Sep 07, 2005
1, 2, 3
4
5
Source
Gate
Drain
Rev.4.00 Sep 07, 2005 page 1 of 6


Renesas Electronics Components Datasheet

HAT2096H Datasheet

Silicon N-Channel Power MOSFET Power Switching

No Preview Available !

HAT2096H
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25 °C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
Tch
Tstg
Value
30
±20
40
160
40
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
30
V (BR) GSS ±20
IGSS — — ±10
IDSS
——
1
VGS (off) 1.0 — 2.5
RDS (on) — 4.2 5.3
RDS (on) — 7.0 10
|yfs| 30 50 —
Ciss — 2200 —
Coss
— 600 —
Crss
— 330 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mID = 20 A, VGS = 10 V Note 3
mID = 20 A, VGS = 4.5 V Note 3
S ID = 20 A, VDS = 10 V Note 3
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
Qg
Qgs
Qgd
— 40 — nC VDD = 10 V
— 7 — nC VGS = 10 V
— 8 — nC ID = 40 A
td (on)
tr
td (off)
tf
VDF
trr
— 20 — ns VGS = 10 V, ID = 20 A
— 49 — ns VDD 10 V
— 62 — ns RL = 0.5
— 15 — ns Rg = 4.7
— 0.85 1.11 V IF = 40 A, VGS = 0 Note 3
— 60 — ns IF = 40 A, VGS = 0
diF/dt = 50 A/µs
Rev.4.00 Sep 07, 2005 page 2 of 6


Part Number HAT2096H
Description Silicon N-Channel Power MOSFET Power Switching
Maker Renesas
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