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HIP0061 - 3-Transistor Common Source ESD Protected Power MOSFET Array

General Description

The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration.

Key Features

  • Three 3.5A Power MOS N-Channel Transistors.
  • Output Voltage to 60V.
  • rDS(ON).
  • . 0.225 Max Per Transistor at VGS = 10V.
  • Pulsed Current.
  • 10A Each Transistor.
  • Avalanche Energy.
  • . 100mJ Each Transistor.
  • Grounded Tab Eliminates Heat Sink Isolation.

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Datasheet Details

Part number HIP0061
Manufacturer Renesas
File Size 528.22 KB
Description 3-Transistor Common Source ESD Protected Power MOSFET Array
Datasheet download datasheet HIP0061 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET HIP0061 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array FN3982 Rev 0.00 December 1997 Features • Three 3.5A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(ON). . . . . . 0.225 Max Per Transistor at VGS = 10V • Pulsed Current . . . . . . . . . . . . . . . 10A Each Transistor • Avalanche Energy. . . . . . . . . . . 100mJ Each Transistor • Grounded Tab Eliminates Heat Sink Isolation Applications • Automotive • Appliance • Industrial Control • Robotics • Relay, Solenoid, Lamp Drivers Ordering Information TEMP. PART NUMBER RANGE (oC) PACKAGE PKG. NO. HIP0061AS1 -40 to 125 7 Ld Staggered Vertical SIP Z7.05C HIP0061AS2 -40 to 125 7 Ld Gullwing SIP Z7.