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HS54095
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 13.5 Ω typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25°C)
• Low drive current • High density mounting
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
G 321
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
Pch
θch-a
Tch
Tstg
REJ03G1668-0200 Rev.2.00
Dec 10, 2009
D 1. Gate 2. Drain 3. Source
S
Ratings 600 ±30 0.2 0.8 0.2 0.8 0.
HS54095 Datasheet
