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Renesas Electronics Components Datasheet

ISL6612B Datasheet

Advanced Synchronous Rectified Buck MOSFET Drivers

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ISL6612B, ISL6613B
NOT RECOMMENDED FOR NEW DESIGNS
RECOMMENDED REPLACEMENT PARTS
ISL6622A, ISL6622B
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
DATASHEET
FN9205
Rev.4.00
May 1, 2012
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Low VCC Rising Threshold (7V) for IBA Applications.
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
FN9205 Rev.4.00
May 1, 2012
Page 1 of 12


Renesas Electronics Components Datasheet

ISL6612B Datasheet

Advanced Synchronous Rectified Buck MOSFET Drivers

No Preview Available !

ISL6612B, ISL6613B
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
PART
MARKING
TEMP.
RANGE (°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
ISL6612BCBZ
6612 BCBZ
0 to +85
8 Ld SOIC
M8.15
ISL6612BCRZ
12BZ
0 to +85
10 Ld 3x3 DFN
L10.3x3
ISL6612BECBZ
6612 BECBZ
0 to +85
8 Ld EPSOIC
M8.15B
ISL6612BEIBZ
6612 BEIBZ
-40°C to +85°C
8 Ld EPSOIC
M8.15B
ISL6612BIBZ
6612 BIBZ
-40°C to +85°C
8 Ld SOIC
M8.15
ISL6612BIRZ
2BIZ
-40°C to +85°C
10 Ld 3x3 DFN
L10.3x3
ISL6613BCBZ
6613 BCBZ
0 to +85
8 Ld SOIC
M8.15
ISL6613BCRZ
13BZ
0 to +85
10 Ld 3x3 DFN
L10.3x3
ISL6613BECBZ
6613 BECBZ
0 to +85
8 Ld EPSOIC
M8.15B
ISL6613BEIBZ
6613 BEIBZ
-40°C to +85°C
8 Ld EPSOIC
M8.15B
ISL6613BIBZ
6613 BIBZ
-40°C to +85°C
8 Ld SOIC
M8.15
ISL6613BIRZ
3BIZ
-40°C to +85°C
10 Ld 3x3 DFN
L10.3x3
NOTES:
1. Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil
Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-
020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6612B, ISL6613B. For more information on MSL, please see
Technical Brief TB363.
Pinouts
ISL6612BCB, ISL6613BCB, ISL6612BECB, ISL6613BECB
(8 LD SOIC, EPSOIC)
TOP VIEW
UGATE 1
BOOT 2
PWM 3
GND 4
GND
8 PHASE
7 PVCC
6 VCC
5 LGATE
ISL6612BCR, ISL6613BCR
(10 LD 3x3 DFN)
TOP VIEW
UGATE
BOOT
N/C
PWM
GND
1
2
3
4
5
GND
10 PHASE
9 PVCC
8 N/C
7 VCC
6 LGATE
FN9205 Rev.4.00
May 1, 2012
Page 2 of 12


Part Number ISL6612B
Description Advanced Synchronous Rectified Buck MOSFET Drivers
Maker Renesas
Total Page 12 Pages
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